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Applied-Epi (Veeco) 1040, arsenide-antimonide III-V MBE system.
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Effusion cell outgassing
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Source flange of the arsenide-antimonide MBE
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GaSb based mid-infrared metamorphic laser bar
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Lateral distributed feedback Bragg ridge laser waveguide etched into GaSb mid-IR laser
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Applied-Epi (Veeco) 930, legacy silicon-germanium MBE system
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Hot HOPG filament carbon source
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VG V80H arsenide-phosphide MBE (left) and metal epitaxy (right) systems
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Internal view fo the source flange of a V80-H MBE system
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X-ray diffraction of twinned Al(111) grown on a Si(111) 7×7 surface
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Photoluminescence data during development of optoelectronic heterostructures
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Dislocation filtered images of the ordered abrupt metamorphic interface between Al(111) and Si(111)
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Cross section electron microscope of an etched Al sidewall showing post-etch residue.
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Dual reactor MBE system with central distribution robot in the center.
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Hot SiC substrate Heater
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Substrate Manipulator coated in TiN
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DCA Instruments multi wafer load lock during outgassing
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Substrate during TiN growth
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DCA M600 MBE system designed around two electron gun sources for low vapor pressure materials
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Molten germanium crucible viewed during growth